MT4C1006C-6
Micron Technology
- 生命周期状态Discontinued
- 说明Static Column DRAM, 4MX1, 60ns, CMOS, CDIP18
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeSEPARATE
- TechnologyCMOS
- JESD-30 CodeR-XDIP-T18
- Memory Width1
- Organization4MX1
- Package CodeDIP
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Memory Density4194304 bit
- Memory IC TypeSTATIC COLUMN DRAM
- Refresh Cycles1024
- Terminal Pitch2.54 mm
- Access Time-Max60 ns
- Number of Words4194304 words
- Terminal FinishTin/Lead (Sn/Pb)
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max110 mA
- Number of Terminals18
- Standby Current-Max0.001 Amp
- Number of Words Code4M
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC
- Output Characteristics3-STATE
- Package Equivalence CodeDIP18,.4
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)5 V
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MT4C1006C-6