MT49H8M36SJ-25E:B
Micron Technology
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明IC DRAM 288MBIT PARALLEL 144FBGA
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)11.0000
- Access ModeMULTI BANK PAGE BURST
- Length (mm)18.5000
- JESD-30 CodeR-PBGA-B144
- Memory Width36
- Package CodeTBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee1
- Memory IC TypeDDR DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Terminal PositionBOTTOM
- Additional FeatureAUTO REFRESH
- Memory Organization8MX36
- Number of Functions1
- Number of Terminals144
- Terminal Pitch (mm)1.000
- Number of Words Code8M
- Memory Density (bits)301989888.0000000000000000
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.2000
- Supply Voltage-Max (V)1.90000
- Supply Voltage-Min (V)1.70000
- Supply Voltage-Nom (V)1.8
- Number of Words (words)8388608.0000000000000000
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
MT49H8M36SJ-25E:B有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
MT49H8M36SJ-25E:B