Micron Technology MT49H64M9CSJ-25EIT:B | 搜芯易Sourcengine

Micron Technology MT49H64M9CSJ-25EIT:B

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR DRAM, 64MX9, 0.2ns, CMOS, PBGA144
类别
Semiconductors Memory ICs DRAMs DDR DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
SEPARATE
Technology
CMOS
JESD-30 Code
R-PBGA-B144
Memory Width
9
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR DRAM
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
64MX9
Number of Terminals
144
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.2
Number of Words Code
64M
Memory Density (bits)
603979776
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Number of Words (words)
67108864
Sequential Burst Length
2,4,8
Standby Current-Max (A)
0.005
Supply Current-Max (mA)
655
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA144,12X18,40/32
Clock Frequency-Max (MHz)
400
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40