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MT49H32M18CSJ-18:B

Micron Technology

MT49H32M18CSJ-18:B 产品规格书
Micron Technology MT49H32M18CSJ-18:B
  • 生命周期状态
    EOL
  • RoHS
    符合RoHS标准
  • REACH
    REACH compliant
  • 说明
    MICRON - MT49H32M18CSJ-18:B - DRAM, DDR, 576 Mbit, 32M x 18bit, 533 MHz, TFBGA, 144 Pins
  • 类别
    Semiconductors Memory ICs
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.32
  • SB Code
    8542.32.00.15
  • Width
    11
  • Length
    18.5
  • Technology
    CMOS
  • Access Mode
    MULTI BANK PAGE BURST
  • JESD-30 Code
    R-PBGA-B144
  • Memory Width
    18
  • Organization
    32MX18
  • Package Code
    TBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, THIN PROFILE
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    603979776
  • Memory IC Type
    DDR DRAM
  • Operating Mode
    SYNCHRONOUS
  • Terminal Pitch
    1
  • Number of Ports
    1
  • Number of Words
    33554432
  • Seated Height-Max
    1.2
  • Terminal Position
    BOTTOM
  • Additional Feature
    AUTO REFRESH
  • Number of Functions
    1
  • Number of Terminals
    144
  • Number of Words Code
    32M
  • Package Body Material
    PLASTIC/EPOXY
  • Supply Voltage-Max (Vsup)
    1.9
  • Supply Voltage-Min (Vsup)
    1.7
  • Supply Voltage-Nom (Vsup)
    1.8
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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