MT49H32M18CBM-25E:B
Micron Technology
- 生命周期状态Discontinued
- 说明DDR DRAM, 32MX18, 15ns, CMOS, PBGA144
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- Width11 mm
- Length18.5 mm
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B144
- Memory Width18
- Organization32MX18
- Package CodeTBGA
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density603979776 bit
- Memory IC TypeDDR DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch1 mm
- Access Time-Max15 ns
- Number of Ports1
- Number of Words33554432 words
- Terminal FinishTIN SILVER COPPER
- Seated Height-Max1.2 mm
- Terminal PositionBOTTOM
- Additional FeatureAUTO REFRESH
- Number of Functions1
- Number of Terminals144
- Number of Words Code32M
- Package Body MaterialPLASTIC/EPOXY
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
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