Micron Technology MT49H16M36SJ-18:BTR | 搜芯易Sourcengine

Micron Technology MT49H16M36SJ-18:BTR

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DRAM Chip DDR RLDRAM2 576Mbit 16Mx36 1.8V 144-Pin FBGA T/R
类别
Semiconductors Memory ICs

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
11.0000
Access Mode
MULTI BANK PAGE BURST
Length (mm)
18.5000
JESD-30 Code
R-PBGA-B144
Memory Width
36
Package Code
TBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
DDR DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Finish
Tin/Silver/Copper (Sn96.8Ag3.0Cu0.2)
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO REFRESH; TERM PITCH-MAX
Memory Organization
16MX36
Number of Functions
1
Number of Terminals
144
Terminal Pitch (mm)
1.000
Number of Words Code
16M
Memory Density (bits)
603979776.0000000000000000
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2000
Supply Voltage-Max (V)
1.90000
Supply Voltage-Min (V)
1.70000
Supply Voltage-Nom (V)
1.8
Number of Words (words)
16777216.0000000000000000
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
95.0
Operating Temperature-Min (Cel)
0.0
Time@Peak Reflow Temperature-Max (s)
30