Micron Technology MT48LC64M4A2BB-75:D | 搜芯易Sourcengine

Micron Technology MT48LC64M4A2BB-75:D

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Synchronous DRAM, 64MX4, 5.4ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.24
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
8
Access Mode
FOUR BANK PAGE BURST
Length (mm)
16
JESD-30 Code
R-PBGA-B60
Memory Width
4
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
SYNCHRONOUS DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
64MX4
Number of Functions
1
Number of Terminals
60
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
5.4
Number of Words Code
64M
Memory Density (bits)
268435456
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
67108864
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max (A)
0.002
Supply Current-Max (mA)
270
Interleaved Burst Length
1,2,4,8
Package Equivalence Code
BGA60,8X15,32
Clock Frequency-Max (MHz)
133
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0