Micron Technology MT47R256M4CF-25IT:H | 搜芯易Sourcengine

Micron Technology MT47R256M4CF-25IT:H

生命周期状态
Active
说明
DDR2 DRAM, 256MX4, 0.4ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
8
Access Mode
MULTI BANK PAGE BURST
Length (mm)
10
JESD-30 Code
R-PBGA-B60
Memory Width
4
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
256MX4
Number of Functions
1
Number of Terminals
60
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.4
Number of Words Code
256M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.5
Supply Voltage-Nom (V)
1.55
Number of Words (words)
268435456
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40