MT47J256M4HR-3E:E
Micron Technology
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR2 DRAM, 256MX4, CMOS, PBGA84
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- Width8 mm
- Length12.5 mm
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B84
- Memory Width4
- Organization256MX4
- Package CodeTFBGA
- Self RefreshYES
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density1073741824 bit
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Number of Ports1
- Number of Words268435456 words
- Terminal FinishTIN SILVER COPPER
- Seated Height-Max1.2 mm
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals84
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Supply Voltage-Max (Vsup)1.625 V
- Supply Voltage-Min (Vsup)1.425 V
- Supply Voltage-Nom (Vsup)1.5 V
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MT47J256M4HR-3E:E