Micron Technology MT47H512M4-25:G | 搜芯易Sourcengine

Micron Technology MT47H512M4-25:G

生命周期状态
Discontinued
说明
DDR2 DRAM, 256MX4, CMOS, PBGA63
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
JESD-30 Code
R-PBGA-B63
Memory Width
4
Organization
256MX4
Package Code
BGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
1073741824 bit
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Number of Words
268435456 words
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
SELF CONTAINED REFRESH
Number of Functions
1
Number of Terminals
63
Number of Words Code
256M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
85 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V