MT47H256M8THN-3:M
Micron Technology
- 生命周期状态Active
- 说明DDR2 DRAM, 256MX8, CMOS, PBGA63
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)8
- Access ModeDUAL BANK PAGE BURST
- Length (mm)10
- JESD-30 CodeR-PBGA-B63
- Memory Width8
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Terminal PositionBOTTOM
- Additional FeatureSELF REFRESH
- Memory Organization256MX8
- Number of Functions1
- Number of Terminals63
- Terminal Pitch (mm)0.8
- Number of Words Code256M
- Memory Density (bits)2147483648
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)1.9
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)268435456
- Standby Current-Max (A)0.02
- Supply Current-Max (mA)205
- Package Equivalence CodeBGA63,9X11,32
- Clock Frequency-Max (MHz)333.3
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)0
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MT47H256M8THN-3:M