Micron Technology MT47H256M8-3:G | 搜芯易Sourcengine

Micron Technology MT47H256M8-3:G

生命周期状态
Discontinued
说明
DDR2 DRAM, 128MX8, CMOS, PBGA63
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
JESD-30 Code
R-PBGA-B63
Memory Width
8
Package Code
BGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
SELF CONTAINED REFRESH
Memory Organization
128MX8
Number of Functions
1
Number of Terminals
63
Number of Words Code
128M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
134217728
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0