Micron Technology MT47H256M4HR-3EAT:E | 搜芯易Sourcengine

Micron Technology MT47H256M4HR-3EAT:E

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR2 DRAM, 256MX4, 0.4ns, CMOS, PBGA84
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
8
Access Mode
MULTI BANK PAGE BURST
Length (mm)
12.5
JESD-30 Code
R-PBGA-B84
Memory Width
4
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
256MX4
Number of Functions
1
Number of Terminals
84
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.4
Number of Words Code
256M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
268435456
Supply Current-Max (mA)
100
Operating Temperature-Max (Cel)
105
Operating Temperature-Min (Cel)
-40