Micron Technology MT47H128M8HV-187ELAT:E | 搜芯易Sourcengine

Micron Technology MT47H128M8HV-187ELAT:E

生命周期状态
Discontinued
说明
DDR2 DRAM, 128MX8, 0.35ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
8
Access Mode
MULTI BANK PAGE BURST
Length (mm)
11.5
JESD-30 Code
R-PBGA-B60
Memory Width
8
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
TIN LEAD SILVER
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
128MX8
Number of Functions
1
Number of Terminals
60
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.35
Number of Words Code
128M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
134217728
Sequential Burst Length
4,8
Supply Current-Max (mA)
425
Interleaved Burst Length
4,8
Package Equivalence Code
BGA60,9X11,32
Clock Frequency-Max (MHz)
533
Operating Temperature-Max (Cel)
105
Operating Temperature-Min (Cel)
-40