Micron Technology MT46V64M8FN-75E:F | 搜芯易Sourcengine

Micron Technology MT46V64M8FN-75E:F

生命周期状态
Discontinued
说明
DDR1 DRAM, 64MX8, 0.75ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
10
Access Mode
FOUR BANK PAGE BURST
Length (mm)
12.5
JESD-30 Code
R-PBGA-B60
Memory Width
8
Package Code
TBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
TIN LEAD SILVER
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
64MX8
Number of Functions
1
Number of Terminals
60
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.75
Number of Words Code
64M
Memory Density (bits)
536870912
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.3
Supply Voltage-Nom (V)
2.5
Number of Words (words)
67108864
Sequential Burst Length
2,4,8
Standby Current-Max (A)
0.005
Supply Current-Max (mA)
160
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA60,9X12,40/32
Clock Frequency-Max (MHz)
133
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0