MT46V64M4TG-6L
Micron Technology
- 生命周期状态Active-Unconfirmed
- 说明DDR1 DRAM, 64MX4, CMOS, PDSO66
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-G66
- Memory Width4
- Package CodeTSSOP
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Memory IC TypeDDR1 DRAM
- Refresh Cycles8192
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Memory Organization64MX4
- Number of Terminals66
- Terminal Pitch (mm)0.635
- Number of Words Code64M
- Memory Density (bits)268435456
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)2.5
- Number of Words (words)67108864
- Sequential Burst Length2,4,8
- Interleaved Burst Length2,4,8
- Package Equivalence CodeTSSOP66,.46
- Clock Frequency-Max (MHz)167
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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MT46V64M4TG-6L