Micron Technology MT46V32M16FN-5BLIT:D | 搜芯易Sourcengine

Micron Technology MT46V32M16FN-5BLIT:D

生命周期状态
Discontinued
说明
DDR1 DRAM, 32MX16, 0.7ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B60
Memory Width
16
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR1 DRAM
Refresh Cycles
8192
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
32MX16
Number of Terminals
60
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.7
Number of Words Code
32M
Memory Density (bits)
536870912
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
2.6
Number of Words (words)
33554432
Sequential Burst Length
2,4,8
Standby Current-Max (A)
0.005
Supply Current-Max (mA)
480
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA60,9X12,40/32
Clock Frequency-Max (MHz)
200
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40