Micron Technology MT46V32M16CY-5BXIT:J | 搜芯易Sourcengine

Micron Technology MT46V32M16CY-5BXIT:J

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
DDR1 DRAM, 32MX16, 0.7ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
8
Access Mode
FOUR BANK PAGE BURST
Length (mm)
12.5
JESD-30 Code
R-PBGA-B60
Memory Width
16
Package Code
TBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
32MX16
Number of Functions
1
Number of Terminals
60
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.7
Number of Words Code
32M
Memory Density (bits)
536870912
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.5
Supply Voltage-Nom (V)
2.6
Number of Words (words)
33554432
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
30