MT46V16M16TG-75EIT:F
Micron Technology
- 生命周期状态Discontinued
- 说明DDR1 DRAM, 64MX16, 0.75ns, CMOS, PDSO66
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10.16
- Access ModeFOUR BANK PAGE BURST
- Length (mm)22.22
- JESD-30 CodeR-PDSO-G66
- Memory Width16
- Package CodeTSSOP
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee3
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization64MX16
- Number of Functions1
- Number of Terminals66
- Terminal Pitch (mm)0.65
- Access Time-Max (ns)0.75
- Number of Words Code64M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)2.7
- Supply Voltage-Min (V)2.3
- Supply Voltage-Nom (V)2.5
- Number of Words (words)67108864
- Sequential Burst Length2,4,8
- Standby Current-Max (A)0.004
- Supply Current-Max (mA)380
- Interleaved Burst Length2,4,8
- Package Equivalence CodeTSSOP66,.46
- Clock Frequency-Max (MHz)133
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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MT46V16M16TG-75EIT:F