MT46V16M16P-6TIT:G
Micron Technology
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR1 DRAM, 16MX16, 0.7ns, CMOS, PDSO66
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)10.16
- Access ModeFOUR BANK PAGE BURST
- Length (mm)22.22
- JESD-30 CodeR-PDSO-G66
- Memory Width16
- Package CodeTSSOP
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee3
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization16MX16
- Number of Functions1
- Number of Terminals66
- Terminal Pitch (mm)0.65
- Access Time-Max (ns)0.7
- Number of Words Code16M
- Memory Density (bits)268435456
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)2.7
- Supply Voltage-Min (V)2.3
- Supply Voltage-Nom (V)2.5
- Number of Words (words)16777216
- Supply Current-Max (mA)180
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
MT46V16M16P-6TIT:G有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
MT46V16M16P-6TIT:G