Micron Technology MT46H64M16LFCM-75IT:A | 搜芯易Sourcengine

Micron Technology MT46H64M16LFCM-75IT:A

生命周期状态
Active
说明
DDR1 DRAM, 64MX16, 6ns, CMOS, PBGA90
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
10
Access Mode
FOUR BANK PAGE BURST
Length (mm)
13
JESD-30 Code
R-PBGA-B90
Memory Width
16
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
64MX16
Number of Functions
1
Number of Terminals
90
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
6
Number of Words Code
64M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
1.95
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
67108864
Sequential Burst Length
2,4,8,16
Standby Current-Max (A)
0.016
Supply Current-Max (mA)
60
Interleaved Burst Length
2,4,8,16
Package Equivalence Code
BGA90,9X15,32
Clock Frequency-Max (MHz)
133
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40