MT46H256M32L4KZ-6IT:A
Micron Technology
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR1 DRAM, 256MX32, 5.5ns, CMOS, PBGA152
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeS-PBGA-B152
- Memory Width32
- Package CodeFBGA
- Package ShapeSQUARE
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR1 DRAM
- Refresh Cycles8192
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Memory Organization256MX32
- Number of Terminals152
- Terminal Pitch (mm)0.635
- Access Time-Max (ns)5.5
- Number of Words Code256M
- Memory Density (bits)8589934592
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)1.8
- Number of Words (words)268435456
- Sequential Burst Length2,4,8,16
- Standby Current-Max (A)1.0E-5
- Supply Current-Max (mA)140
- Interleaved Burst Length2,4,8,16
- Package Equivalence CodeBGA152,21X21,25
- Clock Frequency-Max (MHz)166
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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MT46H256M32L4KZ-6IT:A