MT45W4MW16BFB-601WT
Micron Technology
- 生命周期状态Discontinued
- 说明Pseudo Static RAM, 4MX16, 60ns, CMOS, PBGA54
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)6
- Length (mm)8
- JESD-30 CodeR-PBGA-B54
- Memory Width16
- Package CodeVFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee0
- Memory IC TypePSEUDO STATIC RAM
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Memory Organization4MX16
- Number of Functions1
- Number of Terminals54
- Terminal Pitch (mm)0.75
- Access Time-Max (ns)60
- Number of Words Code4M
- Memory Density (bits)67108864
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)1.95
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)4194304
- Standby Current-Max (A)0.00012
- Supply Current-Max (mA)35
- Package Equivalence CodeBGA54,6X9,30
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-30
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MT45W4MW16BFB-601WT