Micron Technology MT44K64M18RCT-125E:A | 搜芯易Sourcengine

Micron Technology MT44K64M18RCT-125E:A

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR DRAM, 64MX18, 0.1ns, CMOS, PBGA168
类别
Semiconductors Memory ICs DRAMs DDR DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
13.5
Access Mode
DUAL BANK PAGE BURST
Length (mm)
13.5
JESD-30 Code
S-PBGA-B168
Memory Width
18
Package Code
LBGA
Package Shape
SQUARE
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
AUTO REFRESH
Memory Organization
64MX18
Number of Functions
1
Number of Terminals
168
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.1
Number of Words Code
64M
Memory Density (bits)
1207959552
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.45
Supply Voltage-Nom (V)
1.35
Number of Words (words)
67108864
Sequential Burst Length
2,4,8
Standby Current-Max (A)
0.25
Supply Current-Max (mA)
2610
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA168,13X13,40
Clock Frequency-Max (MHz)
800
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0