Micron Technology MT44K32M18RB-107E:B | 搜芯易Sourcengine

Micron Technology MT44K32M18RB-107E:B

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DRAM Chip DDR RLDRAM3 576Mbit 32Mx18 1.35V 168-Pin TBGA Tray
类别
Semiconductors Memory ICs

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
13.5000
Access Mode
MULTI BANK PAGE BURST
Length (mm)
13.5000
JESD-30 Code
S-PBGA-B168
Memory Width
18
Package Code
TBGA
Package Shape
SQUARE
Package Style
GRID ARRAY, THIN PROFILE
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
DDR DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO REFRESH
Memory Organization
32MX18
Number of Functions
1
Number of Terminals
168
Terminal Pitch (mm)
1.000
Number of Words Code
32M
Memory Density (bits)
603979776.0000000000000000
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2000
Supply Voltage-Max (V)
1.42000
Supply Voltage-Min (V)
1.28000
Supply Voltage-Nom (V)
1.35
Number of Words (words)
33554432.0000000000000000
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
95.0
Operating Temperature-Min (Cel)
0.0
Time@Peak Reflow Temperature-Max (s)
30