Micron Technology MT42L512M32D4EV-18AT:A | 搜芯易Sourcengine

Micron Technology MT42L512M32D4EV-18AT:A

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
LPDDR2 DRAM, 512MX32, 10ns, CMOS, PBGA253
类别
Semiconductors Memory ICs DRAMs LPDDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Width (mm)
11
Access Mode
MULTI BANK PAGE BURST
Length (mm)
11
JESD-30 Code
S-PBGA-B253
Memory Width
32
Package Code
TFBGA
Self Refresh
YES
Package Shape
SQUARE
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LPDDR2 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
4096
Number of Ports
1
Terminal Finish
Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
Terminal Position
BOTTOM
Additional Feature
SELF REFRESH; IT ALSO REQUIRES 1.2V NOM
Memory Organization
512MX32
Number of Functions
1
Number of Terminals
253
Terminal Pitch (mm)
0.5
Access Time-Max (ns)
10
Number of Words Code
512M
Memory Density (bits)
17179869184
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.95
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
536870912
Supply Current-Max (mA)
7
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30