Micron Technology MT42L32M32D1HE-18AAT:D | 搜芯易Sourcengine

Micron Technology MT42L32M32D1HE-18AAT:D

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DRAM Chip Mobile LPDDR2 SDRAM 1Gbit 32Mx32 1.2V/1.8V 134-Pin VFBGA Tray Automotive AEC-Q100
类别
Semiconductors Memory ICs DRAMs LPDDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
10
Access Mode
MULTI BANK PAGE BURST
Length (mm)
11.5
JESD-30 Code
R-PBGA-B134
Memory Width
32
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LPDDR2 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Finish
Tin/Silver/Copper (Sn96.8Ag3.0Cu0.2)
Terminal Position
BOTTOM
Memory Organization
32MX32
Number of Functions
1
Number of Terminals
134
Terminal Pitch (mm)
0.65
Number of Words Code
32M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
1.3
Supply Voltage-Min (V)
1.14
Supply Voltage-Nom (V)
1.2
Number of Words (words)
33554432
Sequential Burst Length
4,8,16
Standby Current-Max (A)
0.005
Supply Current-Max (mA)
200
Interleaved Burst Length
4,8,16
Package Equivalence Code
BGA134,10X17,25
Clock Frequency-Max (MHz)
533
Operating Temperature-Max (Cel)
105
Operating Temperature-Min (Cel)
-40
Screening Level / Reference Standard
AEC-Q100