MT41K256M4JP-187E:G
Micron Technology
- 生命周期状态Active
- 说明DDR3L DRAM, 256MX4, CMOS, PBGA78
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)8
- Access ModeMULTI BANK PAGE BURST
- Length (mm)11.5
- JESD-30 CodeR-PBGA-B78
- Memory Width4
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR3L DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization256MX4
- Number of Functions1
- Number of Terminals78
- Terminal Pitch (mm)0.8
- Number of Words Code256M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)1.45
- Supply Voltage-Min (V)1.283
- Supply Voltage-Nom (V)1.35
- Number of Words (words)268435456
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MT41K256M4JP-187E:G