Micron Technology MT40A512M8SA-075EA:B | 搜芯易Sourcengine

Micron Technology MT40A512M8SA-075EA:B

生命周期状态
Active
REACH
REACH compliant
说明
DDR4 DRAM, 512MX8, CMOS, PBGA78
类别
Semiconductors Memory ICs DRAMs DDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
7.5
Access Mode
MULTI BANK PAGE BURST
Length (mm)
11
JESD-30 Code
R-PBGA-B78
Memory Width
8
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR4 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
512MX8
Number of Functions
1
Number of Terminals
78
Terminal Pitch (mm)
0.8
Number of Words Code
512M
Memory Density (bits)
4294967296
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.26
Supply Voltage-Min (V)
1.14
Supply Voltage-Nom (V)
1.2
Number of Words (words)
536870912
Sequential Burst Length
8
Standby Current-Max (A)
0.058
Standby Voltage-Min (V)
1.14
Supply Current-Max (mA)
59
Interleaved Burst Length
8
Package Equivalence Code
BGA78,9X13,32
Clock Frequency-Max (MHz)
1333
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
0
Screening Level / Reference Standard
AEC-Q100