Toshiba Corporation MT3S20TU(TE85L) | 搜芯易Sourcengine

Toshiba Corporation MT3S20TU(TE85L)

生命周期状态
EOL
RoHS
符合RoHS标准
说明
RF TRANS NPN 12V 7GHZ UFM
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
10
DC Current Gain-Min (hFE)
100
Power Dissipation-Max (W)
0.9
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.08
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
12
Collector-base Capacitance-Max (pF)
1
Transition Frequency-Nom (fT) (MHz)
7000