Toshiba Corporation MT3S14T | 搜芯易Sourcengine

Toshiba Corporation MT3S14T

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
COLLECTOR
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.03 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
2.5 V
Transition Frequency-Nom (fT)
11000 MHz
Collector-base Capacitance-Max
0.75 pF