MT3S113P(TE12L,F)
Toshiba Corporation
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明RF Bipolar Transistors rf sige heterojunction bipolar npn transistor vhf/uhf band low noise, low distortion amplifier ic:0.1a
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- Number of Elements1
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)200
- Power Dissipation-Max (W)1.6
- Collector Current-Max (IC) (A)0.1
- Operating Temperature-Max (Cel)150
- Transition Frequency-Nom (fT) (MHz)5500
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MT3S113P(TE12L,F)
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MT3S113P(TE12L,F)