Toshiba Corporation MT3S111TU | 搜芯易Sourcengine

Toshiba Corporation MT3S111TU

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
10.5
DC Current Gain-Min (hFE)
200
Power Dissipation-Max (W)
0.8
Transistor Element Material
SILICON GERMANIUM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
6
Collector-base Capacitance-Max (pF)
1.45
Transition Frequency-Nom (fT) (MHz)
10000
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED