Toshiba Corporation MT3S03AT | 搜芯易Sourcengine

Toshiba Corporation MT3S03AT

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F3
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.04 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
5 V
Transition Frequency-Nom (fT)
10000 MHz
Collector-base Capacitance-Max
1.1 pF