MT29F32G08AECBBH3-12:B
Micron Technology
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Flash, 4GX8, PBGA100
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- TechnologyCMOS
- Width (mm)12
- Length (mm)18
- JESD-30 CodeR-PBGA-B100
- Memory Width8
- Package CodeLBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee1
- Memory IC TypeFLASH
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTIN SILVER COPPER
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Memory Organization4GX8
- Number of Functions1
- Number of Terminals100
- Terminal Pitch (mm)1
- Number of Words Code4G
- Memory Density (bits)34359738368
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.4
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)2.7
- Supply Voltage-Nom (V)3.3
- Number of Words (words)4294967296
- Programming Voltage (V)2.7
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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MT29F32G08AECBBH3-12:B