Micron Technology MT29F1G08ABBHC-ET:B | 搜芯易Sourcengine

Micron Technology MT29F1G08ABBHC-ET:B

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Flash, 128MX8, 30ns, PBGA63
类别
Semiconductors Memory ICs Flash Memories FLASH

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Type
SLC NAND TYPE
Technology
CMOS
Width (mm)
10.5
Length (mm)
13
JESD-30 Code
R-PBGA-B63
Memory Width
8
Package Code
VFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e3
Memory IC Type
FLASH
Operating Mode
ASYNCHRONOUS
Parallel/Serial
SERIAL
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
128MX8
Number of Functions
1
Number of Terminals
63
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
30
Number of Words Code
128M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
1.95
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
134217728
Programming Voltage (V)
1.8
Standby Current-Max (A)
5.0E-5
Supply Current-Max (mA)
20
Package Equivalence Code
BGA63,10X12,32
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
225
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40