Micron Technology MT25QL02GCBB8E5X-0SUT | 搜芯易Sourcengine

Micron Technology MT25QL02GCBB8E5X-0SUT

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Flash, 256MX8
类别
Semiconductors Memory ICs Flash Memories FLASH

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Type
NOR TYPE
Technology
CMOS
JESD-30 Code
R-PBGA-B
Memory Width
8
Package Shape
RECTANGULAR
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
FLASH
Operating Mode
SYNCHRONOUS
Parallel/Serial
SERIAL
Serial Bus Type
QSPI
Write Protection
HARDWARE/SOFTWARE
Terminal Position
BOTTOM
Memory Organization
256MX8
Number of Functions
1
Number of Words Code
256M
Memory Density (bits)
2147483648
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
2.7
Supply Voltage-Nom (V)
3
Data Retention Time-Min
20
Number of Words (words)
268435456
Programming Voltage (V)
3
Standby Current-Max (A)
0.0008
Supply Current-Max (mA)
85
Clock Frequency-Max (MHz)
133
Peak Reflow Temperature (Cel)
260
Endurance (Write/Erase Cycles)
100000
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
30