MT18GTF25672FY-667E1D4
Micron Technology
- 生命周期状态Active-Unconfirmed
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Synchronous DRAM Module, 256MX72, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- TechnologyCMOS
- Width (mm)30.35
- Access ModeSINGLE BANK PAGE BURST
- Length (mm)133.35
- JESD-30 CodeR-XDMA-N240
- Memory Width72
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- J-STD-609 Codee4
- Memory IC TypeSYNCHRONOUS DRAM MODULE
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Terminal FinishGOLD
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization256MX72
- Number of Functions1
- Number of Terminals240
- Number of Words Code256M
- Memory Density (bits)19327352832
- Package Body MaterialUNSPECIFIED
- Seated Height-Max (mm)5.1
- Supply Voltage-Max (V)1.625
- Supply Voltage-Min (V)1.425
- Supply Voltage-Nom (V)1.5
- Number of Words (words)268435456
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MT18GTF25672FY-667E1D4