Micron Technology MT16LSDT6464AY-133XX | 搜芯易Sourcengine

Micron Technology MT16LSDT6464AY-133XX

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, PDMA168
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
3.99
Access Mode
DUAL BANK PAGE BURST
Length (mm)
133.35
JESD-30 Code
R-PDMA-N168
Memory Width
64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
SYNCHRONOUS DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
GOLD
DLA Qualification
Not Qualified
Terminal Position
DUAL
Memory Organization
64MX64
Number of Functions
1
Number of Terminals
168
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
5.4
Number of Words Code
64M
Memory Density (bits)
4294967296
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
28.73
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
67108864
Standby Current-Max (A)
0.032
Supply Current-Max (mA)
1016
Package Equivalence Code
DIMM168
Clock Frequency-Max (MHz)
133
Operating Temperature-Max (Cel)
65
Operating Temperature-Min (Cel)
0