Micron Technology MT16KTF51264HZ-1G4XX | 搜芯易Sourcengine

Micron Technology MT16KTF51264HZ-1G4XX

生命周期状态
Active
说明
DDR3L DRAM Module, 512MX64, CMOS
类别
Semiconductors Memory ICs DRAMs DDR3L DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
Length (mm)
67.6
JESD-30 Code
R-XZMA-N204
Memory Width
64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
J-STD-609 Code
e4
Memory IC Type
DDR3L DRAM MODULE
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Finish
GOLD
Temperature Grade
COMMERCIAL
Terminal Position
ZIG-ZAG
Additional Feature
AUTO/SELF REFRESH
Memory Organization
512MX64
Number of Functions
1
Number of Terminals
204
Number of Words Code
512M
Memory Density (bits)
34359738368
Package Body Material
UNSPECIFIED
Seated Height-Max (mm)
30.15
Supply Voltage-Max (V)
1.45
Supply Voltage-Min (V)
1.283
Supply Voltage-Nom (V)
1.35
Number of Words (words)
536870912
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0