MT16JSS51264HY-1G4XX
Micron Technology
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR DRAM Module, 512MX64, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width30 mm
- Length67.6 mm
- TechnologyCMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-XZMA-N204
- Memory Width64
- Organization512MX64
- Package CodeDIMM
- Self RefreshYES
- JESD-609 Codee4
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density34359738368 bit
- Memory IC TypeDDR DRAM MODULE
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Number of Words536870912 words
- Terminal FinishGOLD
- Seated Height-Max3.8 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionZIG-ZAG
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals204
- Number of Words Code512M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.575 V
- Supply Voltage-Min (Vsup)1.425 V
- Supply Voltage-Nom (Vsup)1.5 V
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MT16JSS51264HY-1G4XX