MT16JSS51264HIY-1G5D1
Micron Technology
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明DDR DRAM Module, 512MX64, CMOS, PDMA204
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDMA-N204
- Memory Width64
- Organization512MX64
- Package CodeDIMM
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density34359738368 bit
- Memory IC TypeDDR DRAM MODULE
- Refresh Cycles8192
- Terminal Pitch0.6 mm
- Number of Words536870912 words
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Supply Current-Max3800 mA
- Number of Terminals204
- Standby Current-Max0.16 Amp
- Number of Words Code512M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM204,24
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Clock Frequency-Max (fCLK)667 MHz
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MT16JSS51264HIY-1G5D1