Micron Technology MT1259EC-10XT | 搜芯易Sourcengine

Micron Technology MT1259EC-10XT

生命周期状态
Discontinued
说明
Page Mode DRAM, 256KX1, 100ns, MOS
类别
Semiconductors Memory ICs DRAMs PAGE MODE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
SEPARATE
Technology
MOS
Memory Width
1
Organization
256KX1
Package Code
QCCN
JESD-609 Code
e0
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
Memory Density
262144 bit
Memory IC Type
PAGE MODE DRAM
Refresh Cycles
256
Access Time-Max
100 ns
Number of Words
262144 words
Terminal Finish
Tin/Lead (Sn/Pb)
Temperature Grade
MILITARY
Terminal Position
QUAD
Number of Words Code
256K
Qualification Status
Not Qualified
Package Body Material
CERAMIC
Output Characteristics
3-STATE
Package Equivalence Code
LCC(UNSPEC)
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-55 Cel
Supply Voltage-Nom (Vsup)
5 V