Micron Technology MT1259DJP-12 | 搜芯易Sourcengine

Micron Technology MT1259DJP-12

生命周期状态
Discontinued
说明
DRAM, 256KX1, 120ns, MOS, PDSO20
类别
Semiconductors Memory ICs DRAMs OTHER DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
SEPARATE
Technology
MOS
JESD-30 Code
R-PDSO-J20
Memory Width
1
Organization
256KX1
Package Code
SOJ
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
Memory Density
262144 bit
Memory IC Type
OTHER DRAM
Refresh Cycles
512
Terminal Pitch
1.27 mm
Access Time-Max
120 ns
Number of Words
262144 words
Terminal Finish
Tin/Lead (Sn/Pb)
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Number of Terminals
20
Number of Words Code
256K
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
SOJ20/26,.34
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel