MSM51V4260-80JS
LAPIS Semiconductor Co., Ltd.
- 生命周期状态Transferred
- 说明Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-J40
- Memory Width16
- Package CodeSOJ
- Self RefreshNO
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormJ BEND
- J-STD-609 Codee0
- Memory IC TypeFAST PAGE DRAM
- Refresh Cycles512
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Memory Organization256KX16
- Number of Terminals40
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)80
- Number of Words Code256K
- Memory Density (bits)4194304
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)3.3
- Number of Words (words)262144
- Standby Current-Max (A)0.0005
- Supply Current-Max (mA)95
- Package Equivalence CodeSOJ40,.44
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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