LAPIS Semiconductor Co., Ltd. MSM51V4100SL-60TS-L | 搜芯易Sourcengine

LAPIS Semiconductor Co., Ltd. MSM51V4100SL-60TS-L

生命周期状态
Transferred
说明
Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20
类别
Semiconductors Memory ICs DRAMs FAST PAGE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
SEPARATE
Technology
CMOS
JESD-30 Code
R-PDSO-G20
Memory Width
1
Package Code
TSSOP
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Memory IC Type
FAST PAGE DRAM
Refresh Cycles
1024
Reverse Pinout
YES
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
4MX1
Number of Terminals
20
Terminal Pitch (mm)
0.635
Access Time-Max (ns)
60
Number of Words Code
4M
Memory Density (bits)
4194304
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
3.3
Number of Words (words)
4194304
Standby Current-Max (A)
0.00015
Supply Current-Max (mA)
70
Package Equivalence Code
TSSOP20/26,.36
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0