LAPIS Semiconductor Co., Ltd. MSM51V16805A-60JS | 搜芯易Sourcengine

LAPIS Semiconductor Co., Ltd. MSM51V16805A-60JS

生命周期状态
Transferred
说明
EDO DRAM, 2MX8, 60ns, CMOS, PDSO28
类别
Semiconductors Memory ICs DRAMs EDO DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDSO-J28
Memory Width
8
Package Code
SOJ
Self Refresh
NO
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
Memory IC Type
EDO DRAM
Refresh Cycles
4096
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
2MX8
Number of Terminals
28
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
60
Number of Words Code
2M
Memory Density (bits)
16777216
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
3.3
Number of Words (words)
2097152
Standby Current-Max (A)
0.001
Supply Current-Max (mA)
110
Package Equivalence Code
SOJ28,.44
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0