MSM511001B-70RS
LAPIS Semiconductor Co., Ltd.
- 生命周期状态Discontinued
- 说明Nibble Mode DRAM, 1MX1, 70ns, CMOS, PDIP18
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeSEPARATE
- TechnologyCMOS
- JESD-30 CodeR-PDIP-T18
- Memory Width1
- Organization1MX1
- Package CodeDIP
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Memory Density1048576 bit
- Memory IC TypeNIBBLE MODE DRAM
- Refresh Cycles512
- Terminal Pitch2.54 mm
- Access Time-Max70 ns
- Number of Words1048576 words
- Terminal FinishTin/Lead (Sn/Pb)
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max80 mA
- Number of Terminals18
- Standby Current-Max0.001 Amp
- Number of Words Code1M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeDIP18,.3
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)5 V
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MSM511001B-70RS