TTM TECHNOLOGIES INC MSK3003 | 搜芯易Sourcengine

TTM TECHNOLOGIES INC MSK3003

生命周期状态
Active
说明
Power Field-Effect Transistor, 10A I(D), 55V, 0.15ohm, 6-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-CSFM-T12
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
6
Number of Terminals
12
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain Current-Max (ID) (A)
10
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
55
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
71
Pulsed Drain Current-Max (IDM) (A)
25
Drain-source On Resistance-Max (ohm)
0.15
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED