ONSEMI MSD2714AT1G | 搜芯易Sourcengine

ONSEMI MSD2714AT1G

生命周期状态
EOL
RoHS
符合RoHS标准
说明
RF TRANS NPN 25V 650MHZ SC59
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Terminal Finish
TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
90
Power Dissipation-Max (W)
0.225
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector-emitter Voltage-Max (V)
25
Collector-base Capacitance-Max (pF)
0.7
Transition Frequency-Nom (fT) (MHz)
650
Time@Peak Reflow Temperature-Max (s)
30